 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE "SuperBAT" ISSUE 1 - NOVEMBER 1997 7 1 ZHCS1006 C 1 A 3 FEATURES: * High current capability * Low V F APPLICATIONS: * Mobile telecomms, PCMIA & SCSI * DC-DC Conversion PARTMARKING DETAILS : S16 2 3 ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current Forward Voltage @ IF = 1000mA(typ) Average Peak Forward Current;D.C.= 50% Non Repetitive Forward Current t100s t10ms Power Dissipation at Tamb= 25 C Storage Temperature Range Junction Temperature SYMBOL VR IF VF IFAV IFSM Ptot Tstg Tj VALUE 60 900 600 1600 12 5 500 -55 to + 150 125 SOT23 UNIT V mA mV mA A A mW C C ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). PARAMETER Reverse Breakdown Voltage Forward Voltage SYMBOL V (BR)R VF MIN. 60 TYP. 80 245 275 330 395 455 510 620 50 17 12 280 320 390 470 530 600 740 100 MAX. UNIT V mV mV mV mV mV mV mV A pF ns CONDITIONS. IR= 300A IF= IF= IF= IF= IF= IF= IF= 50mA* 100mA* 250mA* 500mA* 750mA* 1000mA* 1500mA* Reverse Current Diode Capacitance Reverse Recovery Time IR CD t rr V R= 45V f= 1MHz,V R= 25V switched from IF = 500mA to IR = 500mA Measured at IR = 50mA *Measured under pulsed conditions. Pulse width= 300s. Duty cycle 2% ZHCS1006 TYPICAL CHARACTERISTICS TYPICAL CHARACTERISTICS 10 1 IF - Forward Current (A) IR - Reverse Current (A) 100m 10m 1m 100u 10u 1u 100n 10n 1n 0 -55C +125C 1 +100C +50C 100m +25C 10m +125C +25C -55C 1m 0 0.1 0.2 0.3 0.4 0.5 0.6 20 40 60 VF - Forward Voltage (V) VR - Reverse Voltage (V) IF v VF IR v VR 0.8 0.6 DC Typical Tj=125C t D=t 1/t p PF(av) - Avg Pwr Diss (W) 1 Typical I F(pk) IF(av) - Avg Fwd Cur (A) Tj=125C 0.6 D=0.5 t p I F(av) =DxI 0.4 F(pk) D=0.2 0.4 D=0.1 D=0.05 PF(av) =I F(av) xV F t 1 D=t 1/t p 0.2 DC D=0.5 D=0.2 D=0.1 D=0.05 t p I F(pk) 0.2 I F(av) =DxI PF(av) =I F(av) F(pk) xV 0 75 85 95 105 115 125 0 F 0 0.4 0.8 1.2 TC - Case Temperature (C) IF(av) - Avg Fwd Curr (A) IF(av) v TC PF(av) v IF(av) Ta - Ambient Temp (C) 125 140 100 Rth=100C/W Rth=200C/W Rth=300C/W CD - Diode Capacitance (pF) 70 75 1 10 100 0 0 20 40 60 VR - Reverse Voltage (V) VR - Reverse Voltage (V) Ta v VR CD v VR ZHCS1006 TYPICAL CHARACTERISTICS MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate. |
Price & Availability of ZHCS1006
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |